PART |
Description |
Maker |
HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
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http:// Infineon Technologies AG SIEMENS AG
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
HYB5117800BSJ-50- Q67100-Q1092 Q67100-Q1093 HYB311 |
2M x 8 - Bit Dynamic RAM 2k Refresh 2M×8-Bit Dynamic RAM (Fast Page Mode)(2M×8动态RAM(快速页面模)
|
SIEMENS AG SIEMENS A G
|
Q67100-Q527 Q67100-Q1056 Q67100-Q519 Q67100-Q518 Q |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM 1个M × 1位动态随机存储器的低功个M位动态随机存储器 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM 1 M x 1-Bit Dynamic RAM Low Power 1 M ′ 1-Bit Dynamic RAM
|
SIEMENS AG Siemens Semiconductor Group
|
THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 32 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 36 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-6 |
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
|
Siemens Semiconductor Group SIEMENS AG
|
HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh 2M x 8-Bit Dynamic RAM From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
|
HYB314171BJ-50- HYB314171BJL-50 HYB314171BJL-70 HY |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
|
http:// SIEMENS A G SIEMENS AG
|